jiangsu changji ang ele ctronics technology co., ltd sop8 plastic-encap sulate mosfets cjq 4503 n-and p-c h annel enhancement mode power mosfet description advance power mosfets provide the designer with the best combination of fast switching, ruggedized device desigh, low on-resistance and cost -effectiveness. the sop8 package is widely preferred for commercial-industrial surface mount applications and suit ed for low voltage applications such as dc/dc converters. marking: maximum ra tings ( t a =25 unless other w ise noted) pa rame ter sy mbol n-channel p-channel unit drain-s ourc e voltag e v ds 30 -30 gate-source v o ltage v gs 20 20 v 6.9 -6.3 conti nuo us dr ain c urrent a t a =2 5 t a =7 0 i d 5.5 -5 pulse d drai n c u rrent b i dm 20 -20 a po w e r diss ipation p d 1.4 w t hermal resist ance from junction to ambient r ja 89 /w operatin g junc tion t e mperatu r e t j 150 storage t e mperature t st g -55 ~ + 150 no tes : a. t hese test s are perform ed w i t h infi nite he at sink. b.pulse width by max.junction temperature. sop8 q4503 yy www.cj-elec.com 1 g , mar ,201 6 v (br) dss r ds(on) max i d 3 0 v ? 28 m @ 10 v ? 6 .9 a 42 m @ 4 .5 v ? - 3 0 v ? 36 m @ - 10 v ? - 6.3 a ? ? 55 m @ - 4 . 5 v ? equivalent circuit soli d dot = green molding compound device, if none,the normal device. q4503 = device co de yy = d ate code soli d dot = pin1 indicator s1 g1 s2 g 2 d2d2 d1 d1 12 3 4 5 6 78
parameter symbol test conditio n min typ max units static v gs =0, i d =250a n-ch 30 drain-source breakdow n voltage v (br)dss v gs =0, i d =-250a p-ch -30 v v ds =v gs , i d =250a n-ch 1 1.5 3 gate-threshold voltage v gs(th) v ds =v gs , i d =-250a p-ch -1 -1.7 -3 v n-ch gate-body leakage i gss v ds =0v, v gs =20v p-ch 100 na v ds =30v, v gs =0v n-ch 1 zero gate voltage drain curren t i dss v ds =-30v, v gs =0v p-ch -1 a v gs =10v, i d =6a n-ch 10 28 v gs =-10v, i d =-6a p-ch 16 36 v gs =4.5v, i d =4a n-ch 14 42 drain-source o n -resista n ce c r ds(on ) v gs =-4.5v, i d =-4a p-ch 25 55 m? v ds =10v, i d =6a n-ch forward transcond uctanc e g fs v ds =-10v, i d =-6a p-ch 4 s i s =1.7a,v gs =0v n-ch 1.2 diode forward voltage c v sd i s =-1.7a,v gs =0v p-ch -1.2 v dynamic n-ch 13.5 total gate char ge c q g p-ch 20 n-ch 1.4 gate-source charge d q gs p-ch 2 n-ch 4.7 gate-drain charge d q gd n-chann e l v ds =24v,v gs =4.5v,i d =6a p-channel v ds =-24v,v gs =-4.5v,i d =-6a p-ch 7 nc n-ch 5 turn-on delay time c t d (on) p-ch 8 n-ch 8 rise time d t r p-ch 7 n-ch 18.5 turn-off delay time d t d(of f) p-ch 34 n-ch 9 fall time d t f n-channel v ds =20v,r d =20 ?, i d =1a, v gs =10v,r g =3.3 ? p-cha nne l v ds =-15v,r d =15 ?, i d =-1a, v gs =-10v,r g =3.3 ? p-ch 26 ns n-ch 770 input capacitance d c iss p-ch 1380 n-ch 80 output capacitance d c oss p-ch 150 n-ch 75 reverse transfer capacitance d c rss n-chann e l v ds =25v,v gs =0v,f =1mhz p-channel v ds =-25v,v gs =0v,f =1 mhz p-ch 140 pf notes : c. pulse test : pulse wid t h 300s, duty cycle 2%. d. guaranteed by design, not su bject to production testing. www.cj-elec.com 2 g,mar,2016 0 2 6 ) ( 7 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 a t =25 / unless otherwise specified
0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 01234 0 2 4 6 8 10 0 5 10 15 20 5 10 15 20 0481 21 62 0 0 20 40 60 80 012345 0 5 10 15 20 t a =25 pulsed t a =25 pulsed i s v sd t a =25 pulsed source current i s (a) source to drain voltage v sd (v) t a =25 pulsed t a =25 pulsed transfer charact eri stics drain current i d (a) gate to source voltage v gs (v) v gs =4.5v v gs =10v i d r ds(on) on-resistance r ds(on) (m ? ) drain current i d (a) v gs r ds(on) i d =6.0a on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) v gs =2.0v v gs =2.5v v gs =10v 7.0v 5.0v 4.5v v gs =3.0v output c h aracteristics drain current i d (a) drain to source voltage v ds (v) CJQ4503-n-ch typical characteristics www.cj-elec.com 3 g,mar,2016
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0 .0 1 -0.1 -1 -10 -0 -1 -2 -3 -4 -0 -2 -4 -6 -8 -10 -0 -5 -10 -15 -20 10 15 20 25 30 35 -0 -4 -8 -12 -16 -20 0 20 40 60 80 -0 -1 -2 -3 -4 -5 -0 -5 -10 -15 -20 t a =25 pulsed t a =25 pulsed i s v sd t a =25 pulsed source current i s (a) source to drain voltage v sd (v) t a =25 pulsed t a =25 pulsed transfer charact eri stics drain current i d (a) gate to source voltage v gs (v) v gs =-4.5v v gs =-10v i d r ds(on) on-resistance r ds(on) (m ? ) drain current i d (a) v gs r ds(on) i d =-6.0a on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) v gs =-2.5v v gs =-10v -7.0v -5.0v -4.5v v gs =-3.0v output c h aracteristics drain current i d (a) drain to source voltage v ds (v) CJQ4503-p-ch typical characteristics www.cj-elec.com 4 g,mar,2016
www.cj-elec.com 5 g,mar,2016 sop8 package outline dimensions sop8 suggested pad layout mi n max mi n max a a1 0.1 00 0.250 0.004 0.010 a2 1.3 50 1.5 5 0 0.053 0.0 61 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 d 4.800 5.000 0.189 0.197 e e 5.800 6.200 0.228 0.244 e1 3.800 4.000 0.150 0.157 l 0.400 1.270 0.016 0.050 0 8 0 8 sy m bo l dimensions in millimeters dimensions in inches 0.050bsc 1.270bsc 1.350 1.750 0.053 0.069
6 2 3 7 d s h d q g 5 h h o z z z f m h o h f f r p * 0 d u 5 ( ( / 5 h h o 6 l ] h % r [ % r [ 6 l ] h p p & d u w r q & d u w r q 6 l ] h p p * : n j s f v l q f k s f v ? ? s f v ? ? 5 h h o 2 s w l r q
' l d ' l p h q v l r q v d u h l q p l o o l p h w h u ' ' ' * + , : : ? 5 5 5
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